Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement.
Identifieur interne : 000300 ( Main/Exploration ); précédent : 000299; suivant : 000301Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement.
Auteurs : RBID : pubmed:23966225Abstract
Strong quantization effects and tuneable near-infrared photoluminescence emission are reported in mechanically exfoliated crystals of γ-rhombohedral semiconducting InSe. The optical properties of InSe nanosheets differ qualitatively from those reported recently for exfoliated transition metal dichalcogenides and indicate a crossover from a direct to an indirect band gap semiconductor when the InSe flake thickness is reduced to a few nanometers.
DOI: 10.1002/adma.201302616
PubMed: 23966225
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement.</title><author><name sortKey="Mudd, Garry W" uniqKey="Mudd G">Garry W Mudd</name><affiliation wicri:level="1"><nlm:affiliation>School of Physics and AstronomyThe University of Nottingham, Nottingham, NG7 2RD, UK.</nlm:affiliation><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>School of Physics and AstronomyThe University of Nottingham, Nottingham, NG7 2RD</wicri:regionArea></affiliation></author><author><name sortKey="Svatek, Simon A" uniqKey="Svatek S">Simon A Svatek</name></author><author><name sortKey="Ren, Tianhang" uniqKey="Ren T">Tianhang Ren</name></author><author><name sortKey="Patane, Amalia" uniqKey="Patane A">Amalia Patanè</name></author><author><name sortKey="Makarovsky, Oleg" uniqKey="Makarovsky O">Oleg Makarovsky</name></author><author><name sortKey="Eaves, Laurence" uniqKey="Eaves L">Laurence Eaves</name></author><author><name sortKey="Beton, Peter H" uniqKey="Beton P">Peter H Beton</name></author><author><name sortKey="Kovalyuk, Zakhar D" uniqKey="Kovalyuk Z">Zakhar D Kovalyuk</name></author><author><name sortKey="Lashkarev, George V" uniqKey="Lashkarev G">George V Lashkarev</name></author><author><name sortKey="Kudrynskyi, Zakhar R" uniqKey="Kudrynskyi Z">Zakhar R Kudrynskyi</name></author><author><name sortKey="Dmitriev, Alexandr I" uniqKey="Dmitriev A">Alexandr I Dmitriev</name></author></titleStmt><publicationStmt><date when="2013">2013</date><idno type="RBID">pubmed:23966225</idno><idno type="pmid">23966225</idno><idno type="doi">10.1002/adma.201302616</idno><idno type="wicri:Area/Main/Corpus">000441</idno><idno type="wicri:Area/Main/Curation">000441</idno><idno type="wicri:Area/Main/Exploration">000300</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Strong quantization effects and tuneable near-infrared photoluminescence emission are reported in mechanically exfoliated crystals of γ-rhombohedral semiconducting InSe. The optical properties of InSe nanosheets differ qualitatively from those reported recently for exfoliated transition metal dichalcogenides and indicate a crossover from a direct to an indirect band gap semiconductor when the InSe flake thickness is reduced to a few nanometers.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="In-Process"><PMID Version="1">23966225</PMID><DateCreated><Year>2013</Year><Month>10</Month><Day>23</Day></DateCreated><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1521-4095</ISSN><JournalIssue CitedMedium="Internet"><Volume>25</Volume><Issue>40</Issue><PubDate><Year>2013</Year><Month>Oct</Month><Day>25</Day></PubDate></JournalIssue><Title>Advanced materials (Deerfield Beach, Fla.)</Title><ISOAbbreviation>Adv. Mater. Weinheim</ISOAbbreviation></Journal><ArticleTitle>Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement.</ArticleTitle><Pagination><MedlinePgn>5714-8</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1002/adma.201302616</ELocationID><Abstract><AbstractText>Strong quantization effects and tuneable near-infrared photoluminescence emission are reported in mechanically exfoliated crystals of γ-rhombohedral semiconducting InSe. The optical properties of InSe nanosheets differ qualitatively from those reported recently for exfoliated transition metal dichalcogenides and indicate a crossover from a direct to an indirect band gap semiconductor when the InSe flake thickness is reduced to a few nanometers.</AbstractText><CopyrightInformation>© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.</CopyrightInformation></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Mudd</LastName><ForeName>Garry W</ForeName><Initials>GW</Initials><Affiliation>School of Physics and AstronomyThe University of Nottingham, Nottingham, NG7 2RD, UK.</Affiliation></Author><Author ValidYN="Y"><LastName>Svatek</LastName><ForeName>Simon A</ForeName><Initials>SA</Initials></Author><Author ValidYN="Y"><LastName>Ren</LastName><ForeName>Tianhang</ForeName><Initials>T</Initials></Author><Author ValidYN="Y"><LastName>Patanè</LastName><ForeName>Amalia</ForeName><Initials>A</Initials></Author><Author ValidYN="Y"><LastName>Makarovsky</LastName><ForeName>Oleg</ForeName><Initials>O</Initials></Author><Author ValidYN="Y"><LastName>Eaves</LastName><ForeName>Laurence</ForeName><Initials>L</Initials></Author><Author ValidYN="Y"><LastName>Beton</LastName><ForeName>Peter H</ForeName><Initials>PH</Initials></Author><Author ValidYN="Y"><LastName>Kovalyuk</LastName><ForeName>Zakhar D</ForeName><Initials>ZD</Initials></Author><Author ValidYN="Y"><LastName>Lashkarev</LastName><ForeName>George V</ForeName><Initials>GV</Initials></Author><Author ValidYN="Y"><LastName>Kudrynskyi</LastName><ForeName>Zakhar R</ForeName><Initials>ZR</Initials></Author><Author ValidYN="Y"><LastName>Dmitriev</LastName><ForeName>Alexandr I</ForeName><Initials>AI</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2013</Year><Month>08</Month><Day>21</Day></ArticleDate></Article><MedlineJournalInfo><Country>Germany</Country><MedlineTA>Adv Mater</MedlineTA><NlmUniqueID>9885358</NlmUniqueID><ISSNLinking>0935-9648</ISSNLinking></MedlineJournalInfo><CitationSubset>IM</CitationSubset><KeywordList Owner="NOTNLM"><Keyword MajorTopicYN="N">Indium selenide</Keyword><Keyword MajorTopicYN="N">atomic force microscopy</Keyword><Keyword MajorTopicYN="N">dichalcogenides</Keyword><Keyword MajorTopicYN="N">micro-photoluminescence</Keyword><Keyword MajorTopicYN="N">two-dimensional systems</Keyword></KeywordList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="received"><Year>2013</Year><Month>6</Month><Day>7</Day></PubMedPubDate><PubMedPubDate PubStatus="revised"><Year>2013</Year><Month>7</Month><Day>9</Day></PubMedPubDate><PubMedPubDate PubStatus="aheadofprint"><Year>2013</Year><Month>8</Month><Day>21</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2013</Year><Month>8</Month><Day>23</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2013</Year><Month>8</Month><Day>24</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2013</Year><Month>8</Month><Day>24</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pubmed">23966225</ArticleId><ArticleId IdType="doi">10.1002/adma.201302616</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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